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  2. 上海交通大學朱虹課題組招聘博士后
    2018-08-22 11:47:43 作者:本網(wǎng)發(fā)布 來源:材料科學與工程 分享至:

        上海交通大學密西根學院朱虹老師課題組誠聘博士后一名,負責或協(xié)助團隊進行金屬合金體系的腐蝕性能的理論預測和腐蝕機理的研究,并在現(xiàn)有的高通量計算平臺上開發(fā)針對腐蝕相關(guān)基礎(chǔ)參數(shù)的高通量計算工作流。我們誠摯邀請具有理論計算、電化學背景同學的加入。


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        我們將與腐蝕實驗團隊以及世界各地的材料基因組計算研究團隊開展緊密合作( UC Berkeley, University of Michigan, UC San Diego, Georgia Tech, University of Maryland, etc)。


        待遇:


        1. 年收入22w+, 享受相應上海交通大學福利待遇;


        2. 根據(jù)上海市博士后管理政策辦理有關(guān)落戶事宜;


        3. 優(yōu)秀者可轉(zhuǎn)入專職科研序列。


        要求:


        1. 擁有材料、化學或相關(guān)專業(yè)的博士學位


        2. 具有理論模擬計算經(jīng)驗或具有豐富的機器學習特別是材料研究領(lǐng)域的經(jīng)驗


        4. 能夠獨立開展研究,在知名期刊上以第一作者發(fā)表論文


        5. 在同等條件下,優(yōu)先考慮具有較高編程能力的同學


        感興趣的申請者請發(fā)郵件至hong.zhu@sjtu.edu.cn;來信請附簡歷和可以到站的時間。課題組鏈接umji.sjtu.edu.cn/~hzhu。


        朱虹簡介


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    助理教授, 材料科學與工程

    上海交通大學密西根聯(lián)合學院

    上海交通大學材料基因組聯(lián)合研究中心


        榮譽獎勵


        Shanghai Science and Technology Commission's Young Scientific Talent YANG FAN Program, 2016


        NSF sponsored travel award, Materials Computation Center, University of Illinois Urbana-Champaign, 2011


        Doctoral dissertation fellowship, University of Connecticut, 2011


        Best Oral Paper Prize, 18th Connecticut Microelectronics and Optoelectronics Conference, 2009


        Fudi Fellowship and Excellent Academic Scholarship, Shanghai Jiao Tong University, 2003-2006


        科研方向


        Advanced energy and electronic materials design through atomistic modeling, high throughput computations and data mining


        Physical property tailoring through band structure, defect and interface engineering


        發(fā)表論文


        X. Li, Y. Qiao, S. Guo, Z. Xu, H. Zhu, X. Zhang, Y. Yuan, P. He, M. Ishida, and H. Zhou, “Direct Visualization of the Reversible O2?/O? Redox Process in Li-Rich Cathode Materials ”, Adv. Mater. 1705197 (2018)。


        Z. Luo, H. Zhu, T. Ying, D. Li, X. Zeng,  “First principles calculations on the influence of solute elements and chlorine adsorption on the anodic corrosion behavior of Mg (0001) surface”, Surface Science (2018)。


        Q. Dong, Z. Luo, H. Zhu, L. Wang, T. Ying, Z. Jin, D. Li,W. Ding, X. Zeng, “Basal-plane stacking-fault energies of Mg alloys: A first-principles study of metallic alloying effects”, Journal of Materials Science & Technology (2018)。


        J Wu, W Qi, Z Luo, K Liu, H Zhu, “Electronic Structure and Stability of Lead-free Hybrid Halide Perovskites: A Density Functional Theory Study”, Journal of Shanghai Jiaotong University (Science) 23 (1), 202-208 (2018)。


        Y Qin, F Li, P Tu, Y Ma, W Chen, F Shi, Q Xiang, H Shan, L Zhang, P Tao, “Ag3PO4 electrocatalyst for oxygen reduction reaction: enhancement from positive charge”, RSC Advances 8 (10), 5382-5387 (2018)。


        ZM Gibbs, F Ricci, G Li, H Zhu, K Persson, G Ceder, G Hautier, A Jain, “Effective mass and Fermi surface complexity factor from ab initio band structure calculations”, npj Computational Materials 3 (1), 8 (2017)。


        U Aydemir, JH P?hls, H Zhu, G Hautier, S Bajaj, ZM Gibbs, W Chen, G Li, “YCuTe2: a member of a new class of thermoelectric materials with CuTe4-based layered structure”, J. Mater. Chem. A 4 (7), 2461-2472 (2016)。


        H. Zhu, G. Hautier,  U. Aydemir,  Z. M. Gibbs,  G. Li,  S. Bajaj,  J. P?hls,  D. Broberg, W. Chen,  A. Jain,  M. Anne White,  M. Asta,  G. J. Snyder,  K. Persson and  G. Ceder, “Computational and experimental investigation of TmAgTe2 and XYZ2 compounds, a new group of thermoelectric materials identified by first-principles high-throughput screening”, J. Mater. Chem. C, 3, 10554-10565 (2015)。


        W. G. Zeier, H. Zhu, Z. M. Gibbs, G. Ceder, W. Tremel, and G. J. Snyder, “Band convergence in the non-cubic chalcopyrite compounds Cu2MGeSe4”, J. Mater Chem C 2, 10189 (2014)。


        H. Zhu, W. Sun, R. Armiento, P. Lazic, and G. Ceder, “Band structure engineering through orbital interaction for enhanced thermoelectric power factor”, Appl. Phys. Lett. 104, 082107 (2014)。


        H. Zhu, G. Ramanath, and R. Ramprasad, “Interface engineering through atomic dopants in HfO2-based gate stacks”, J. Appl. Phys. 114, 114310 (2013)。


        R. Ramprasad, H. Zhu, P. Rinke and M. Scheffler, “New perspective on formation energies and energy levels of point defects in non-metals”, Phys. Rev. Lett. 108, 066404 (2012)。


        R. J. Mehata, Y. Zhang, H. Zhu, D. Parker, M. Belley, D. Singh, R. Ramprasad, T. Tasciuc, G. Ramanath, “Seebeck and figure of merit enhancement in nanostructured antimony telluride by antisite defect suppression through sulfur doping”, Nano. Lett. 12, 4523 (2012)。


        H. Zhu, C. Tang, L. R. Fonseca and R. Ramprasad, “Recent progress in ab initio simulations of hafnia-based gate stacks”, J. Mater. Sci. 47, 7399 (2012)。


        H. Zhu and R. Ramprasad, “The effective work function of metals interfaced with dielectrics: A first principles study of the Pt-HfO2 interface”, Phys. Rev. B 83, 081416 (R) (2011)。


        Y. Zhong, H. Zhu, L. Shaw and R. Ramprasad, “The equilibrium morphology of WC particles-a combined ab initio and experimental study”, Acta Mater. 59, 3748 (2011)。


        H. Zhu, C. Tang and R. Ramprasad, “Phase equilibria at Si-HfO2 and Pt-HfO2 interfaces from first principles thermodynamics”, Phys. Rev. B 82, 235413 (2010)。


        H. Zhu, M. Aindow and R. Ramprasad, “Stability and work function of TiCxN1-x alloy surfaces: Density functional theory calculations”, Phys. Rev. B 80, 201406 (R) (2009)。

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