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    氫脆機理模型（AIDE、HEDE、HESIV、HELP）和氫探測技術(shù)（TDS、HMT、SIMS、SKP、SKPFM、APT）
    
              
    
                2024-10-14 14:20:57
                作者：考拉腐蝕                來源：考拉腐蝕 
                  分享至：
              
    

      

            
    
            
    
              
              
            
    
            
            
    
              
     
    

    金屬材料中氫脆HE的發(fā)生通常認為有三個階段：
    

     
    

      
    
    1. the ingress of H atoms from the H-containing atmosphere, followed by its diffusion(even at room temperature) to stress-concentated fields and micro structural traps;
      2. 
    
    2. the interacttion between H atoms and a vatiety of multi-demensional microstrcutural defects including vacancies, solute atoms, dislocations, interfaces and micro-voids/cracks；
      3. 
    
    3. the promoted damage nucleation and evolution due to the H-defect interactions.
      4. 

    

     
    

    氫脆HE的幾個模型（embrittlement models)有：
    

     
    

      
    
    • HEDE, H-enhanced decohesion;
      • 
    
    • HELP, H-enhanced localized plasticity;
      • 
    
    • HESIV, H-enhanced strain-induced vacancies;
      • 
    
    • AIDE, Adsorption-induced dislocation emmission;
      • 

    

     
    

    常用的幾種氫探測技術(shù)（ microstructure-sensitive H probing techniques)有：
    

     
    

      
    
    • TDS, Thermal desorption spectrometry 熱脫附光譜;
      • 
    
    • HMT, H microprint technique 氫微印技術(shù);
      • 
    
    • SIMS, Secondary ion mass spectroscopy 二次離子質(zhì)譜;
      • 
    
    • SKP, Scanning Kelvin probe 掃描開爾文探針;
      • 
    
    • SKPFM, Scanning Kelvin probe force microscopy 掃描開爾文探針力顯微鏡;
      • 
    
    • APT, Atom probe tomography 原子探針斷層成像;
      • 
    
    • Netron radiography/tomography 中子射線斷層成像;
      • 

    

     
    

    

    

    

     
                     
      
    
            
    
            
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